20mw-50mw 1310nm Pulse Laser Diode

20mw-50mw 1310nm Pulse Laser Diode
20mw-50mw 1310nm Pulse Laser Diode
20mw-50mw 1310nm Pulse Laser Diode
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Pin Description

The 20mw-50mw 1310nm pulse laser diode uses a DFB chip and features a maximum output power of 60mw. This high performance makes it an ideal pulse laser diode for use in OTDR systems.

Absolute Maximum Ratings
Parameter Symbol Min. Max. Unit
Pulsed Forward Current IFP
500 mA
Reverse Voltage VR
2 V
Reverse Voltage (monitor PD) VRM
10 V
Reverse Current (monitor PD) IFPM
2 mA
Operating Temperature TC 0 60 °C
Storage Temperature Tstg -40 85 °C
Lead Soldering Temperature Tsld
260(10s) °c
Relative Humidity (Noncoagulable) RH
85 %
Optical & Electrical Characteristics
Parameter Symbol Min. Typ. Max. Unit Notes
Forward Voltage VFP
2.0 2.5 V IFP = 200 mA, PW = 10μs, Duty = 1%
Threshold Current Ith
20 35 mA
Optical Output Power From SM Fiber Pf 20
50 mW IFP =200 mA, PW = 10μs, Duty = 1%
Center Wavelength λc 1290 1310 1330 nm IFP = 200 mA, PW = 10μs, Duty = 1%
Spectral Width σ

4 nm RMS (-3 dB)
Rise Time tr
0.5 2.0 ns 10-90%
Fall Time tf
0.5 2.0 ns 90-10%
Monitor Current Im 0.05
2 mA VRM = 5 V

As an experienced FP pulsed diode laser (for OTDR system) manufacturer and supplier in China, our company also offers 8-10mw 1653.5nm Butterfly Laser Diode for gas detection, butterfly fiber coupled laser diodes, Pin TIA receiver, and more.

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