InGaAs Integrated WDM Detector Diode
Theintegrated WDM detector diode can give response to the optical wave within0.1ns.It also has excellent anti-interference ability as the reflectionisolates, reflection insertion loss and return loss are 17dB,0.5dB and-45dB.The insertion of the connector together with the reflection wave havelittle impact on the information. Our detector diode can achieve long-distancecommunication when used together with laser diode. In addition, it has low darkcurrent of 0.1nA to 0.6
Parameter | Symbol | Condition | Index | Unit |
Storage Temperature | Tstg | - | -40~100 | mA |
Operating Temperature | Top | - | -40~85 | V |
Reverse Voltage | Vr | CW | 30 | V |
Soldering Temp | - | - | 260 | ℃ |
Soldering Time | - | - | 10 | S |
Optical& Electrical Characteristics
Parameter | Symbol | Min. | Typ. | Max. | Unit | Test Condition |
| λ | 1310/1490/1550 | nm |
| ||
Dark Current | Id | - | 0.1 | 0.6 | nA | VR=5V,25° |
Quantum Efficiency | R | 0.80 | 0.85 | - |
| VR=5V,λ=1550 nm |
Saturation Power | P | - | - | 6 | dBm | VR=5V, |
Reflection Insertion loss | IL |
|
| 0.5 | dB | 1310/1490 |
Transmission Isolates Degree | - | 30 | - | - | dB | - |
Reflection Isolates Degree | - | 17 | - | - | dB | - |
Rise and Fall Time | Tr/Tf | - | 0.1 | - | ns | RL=50Ω |
Capacitance | Ct | - | - | 0.75 | pF | VR=5 |
Return Loss | R | - | - | -45 | dB | 45~860MHz |
CSO | - | 60 | - | - | dB | 45~860MHz |