30MW 1650nm Pulses Laser Diode Module for OTDR Manufacturer

30MW 1650nm Pulses Laser Diode Module for OTDR

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The maximum output power of the 30mw 1650nm pulse laser diode module for OTDR reaches 30~40mw, making it ideal for use in OTDR systems.

Absolute Maximum Ratings

Parameter	Symbol	Min.	Typical	Max.	Unit
Pulsed Forward Current	IFP			700	mA
Reverse Voltage	VR			2	V
Reverse Voltage (monitor PD)	VRM			10	V
Reverse Current (monitor PD)	IFPM			2	mA
Operating Temperature	TC	0		60	°C
Storage Temperature	Tstg	-40		85	°C
Lead Soldering Temperature	Tsld			260(10s)	°c
Relative Humidity (Noncoagulable)	RH			85	%

Optical & Electrical Characteristics

Parameter	Symbol	Min.	Typ.	Max.	Unit	Notes
Forward Voltage	VFP			3.0	V	IFP = 400 mA, PW = 10 μs, Duty = 1%
Threshold Current	Ith		20	35	mA
Optical Output Power From Fiber	Pf	30			mW	IFP =400 mA, PW = 10 μs, Duty = 1%
Center Wavelength	λC	1645	1650	1655	nm	IFP = 400 mA, PW = 10 μs, Duty = 1%
Spectral Width	σ			4	nm	RMS (−3 dB)
Rise Time	tr		0.5	2.0	ns	10-90%
Fall Time	tf		0.5	2.0	ns	90-10%
Monitor Current	Im	0.05		2	mA	VRM =5 V